In semiconductor production CMP (chemical mechanical polishing), metal oxides (silica particles, alumina particles) are often used to polish semiconductor wafers and metal surfaces. Since various factors (e.g. pH, additives) affect the dispersion states of particles of metal oxides such as alumina particles and silica particles, controlling dispersion states with particle diameter and zeta potential as indices is an area of high interest.
We added a nonionic surfactant to CMP slurry and measured changes in zeta potential and particle diameter before and after the addition.
